Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P<sub>2</sub>O<sub>5</sub> Surface Passivation Treatment

A systematic study is presented into the impact of a P 2 O 5 surface passivation treatment, carried out prior to deposition high refactory metal contact 3.3 kV JBS diodes. Electrical results from Mo, W and Nb diodes reveal that those undergo treatment have major leakage current reduction, most significantly by 3.5 orders magnitude 1.5×10 -6 A.cm -2 for treated When applied fully optimized Mo/SiC diodes, reduces apparent barrier height, as well current. SIMS analysis reveals during phosphorous diffuses top 10 nm SiC, achieving peak density 19 cm -3 , while XPS suggest some this anneal, altering SBH. TCAD simulations help give more insight band diagram changes at Schottky interface, where partial activation ions shown alter barrier, promoting thermionic field emission conduction, effectively lowering height interface in Mo/4H-SiC